2SK3235 Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

2SK3235

Silicon N Channel MOS FET / High Speed Power Switching

Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 500

Gate to source leak current

I GSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off) 3.0

Static drain to source on state RDS(on) —

resistance

Forward transfer admittance |yfs|

8.5

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

td(on) —

Rise time

tr

—

Turn-off delay time

td(off) —

Fall time

tf

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward

voltage

VDF

—

Body-drain diode reverse

trr

—

recovery time

Body-drain diode reverse

recovery charge

Qrr

—

Note: 4. Pulse test

Typ Max

—

—

—

±0.1

—

1

—

4.0

0.3

0.4

14

—

1920 —

220 —

30

—

35

—

30

—

120 —

50

—

48

—

10

—

24

—

0.85 1.3

500 —

20

—

Unit

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

µC

2SK3235

Test Conditions

ID = 10 mA, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 500 V, VGS = 0

VDS = 10 V, ID = 1 mA

ID = 7.5 A, VGS = 10 V Note4

ID = 7.5 A, VDS = 10 V Note4

VDS = 25 V

VGS = 0

f = 1 MHz

ID = 7.5 A

VGS = 10 V

RL = 33.3 Ω

Rg = 10 Ω

VDD = 400 V

VGS = 10 V

ID = 15 A

IF = 15 A, VGS = 0

IF = 15 A, VGS = 0

diF/dt = 100 A/µs

3

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