2SK3235 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK3235 Datasheet PDF : 12 Pages
| |||
2SK3235
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
100
Coss
50
20
Crss
10 VGS = 0
f = 1 MHz
5
0
50 100 150
Drain to Source Voltage
200 250
VDS (V)
Dynamic Input Characteristics
1000
20
800
600
VDS
400
200
VGS
16
V DD = 100 V
250 V
12
400 V
8
V DD = 400 V
250 V
100 V
4
I D= 15 A 0
0
20 40 60 80 100
Gate Charge Qg (nC)
1000
500
200
Switching Characteristics
VGS = 10 V, V DD = 250 V
PW = 10 µs, duty < 1 %
RG=10 Ω
100
tf
t d(off)
50
t d(on)
20
tr
10
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
6
Share Link: 