MJL21196 Просмотр технического описания (PDF) - Motorola => Freescale

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MJL21196

SILICON POWER TRANSISTOR

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Silicon Power Transistors

The MJL21195 and MJL21196 utilize Perforated Emitter technology and are

specifically designed for high power audio output, disk head positioners and linear

applications.

• Total Harmonic Distortion Characterized

• High DC Current Gain – hFE = 25 Min @ IC = 8 Adc

• Excellent Gain Linearity

• High SOA: 2.50 A, 80 V, 1 Second

Order this document

by MJL21195/D

PNP

MJL21195*

MJLN2P1N196*

*Motorola Preferred Device

16 AMPERE

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

200 WATTS

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector–Emitter Voltage – 1.5 V

Collector Current — Continuous

Collector Current — Peak (1)

Base Current – Continuous

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0)

(1) Pulse Test: Pulse Width = 5.0 µs, Duty Cycle ≤ 10%.

VCEO(sus)

250

ICEO

—

Preferred devices are Motorola recommended choices for future use and best overall value.

CASE 340G–02

TO–3PBL

Symbol

VCEO

VCBO

VEBO

VCEX

IC

IB

PD

TJ, Tstg

Value

250

400

5

400

16

30

5

200

1.43

–āā65 to +150

Unit

Vdc

Vdc

Vdc

Vdc

Adc

Adc

Watts

W/°C

°C

Symbol

Max

RθJC

0.7

Unit

°C/W

Typical

Max

Unit

—

—

Vdc

—

100

µAdc

(continued)

©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data

1

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