MJL21196 Просмотр технического описания (PDF) - Motorola => Freescale
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MJL21196 Datasheet PDF : 6 Pages
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MJL21195 MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
3.0
2.5 TJ = 25°C
IC/IB = 10
1.4
TJ = 25°C
1.2 IC/IB = 10
2.0
1.0
VBE(sat)
1.5
0.8
1.0
0.5
0
0.1
VBE(sat)
VCE(sat)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0.6
0.4
0.2
0
100
0.1
VCE(sat)
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
10
TJ = 25°C
PNP MJL21195
NPN MJL21196
10
TJ = 25°C
1.0
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base–Emitter Voltage
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base–Emitter Voltage
100
10 ms
10
1 Sec
50 ms
1.0
TJ = 25°C
250 ms
0.1
1.0
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
4
Motorola Bipolar Power Transistor Device Data
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