DB35-10(2002) Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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производитель

DB35-10
(Rev.:2002)

Three-Phase Si-Bridge Rectifiers

Diotec Semiconductor Germany  

Rating for fusing, t <10 ms

Grenzlastintegral, t <10 ms

DB 35-005 … DB 35-16

TA = 25/C

Operating junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

i2t

1000 A2s

Tj – 50…+150/C

TS – 50…+150/C

Characteristics

Max. current with cooling fin 300 cm2

TA = 50/C R-load

Dauergrenzstrom mit Kühlblech 300 cm2

C-load

Forward voltage – Durchlaßspannung

Tj = 25/C

Leakage current – Sperrstrom

Tj = 25/C

Isolation voltage terminals to case

Isolationsspannung Anschlüsse zum Gehäuse

IF = 17.5 A

VR = VRRM

Thermal resistance junction to case

Wärmewiderstand Sperrschicht – Gehäuse

Admissible torque for mounting

Zulässiges Anzugsdrehmoment

10-32 UNF

M5

Kennwerte

IFAV

35.0 A

IFAV

35.0 A

VF

< 1.05 V 1)

IR

< 10 :A

VISO

> 2500 V

RthC

< 1.8 K/W

18 ± 10% lb.in

2 ± 10% Nm

1) Valid for one branch – Gültig für einen Brückenzweig

28.02.2002

349

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