HAF1008 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
HAF1008 Datasheet PDF : 11 Pages
| |||
HAF1008(L), HAF1008(S)
Body to Drain Diode Reverse
recovery Time
500
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50
Reverse Drain Current IDR (A)
Switching Characteristics
100
50
tr
20
tf
10
t d(off)
5
t d(on)
2
1
0.5
-0.1 -0.2
VGS = -10 V, VDD = -30 V
PW = 300 µs, duty < 1 %
-0.5 -1 -2 -5 -10 -20 -50
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
-20
Pulse Test
-16 VGS = -5 V
-12
0V
-8
10000
Typical capacitance vs.
Drain to Source Voltage
1000
-4
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage VSD (V)
VGS = 0
f = 1 MHz
100
0 -10 -20 -30 -40 -50 -60
Drain to Source Voltage VDS (V)
Rev.1.00, May.13.2003, page 6 of 11
Share Link: 