2SB834 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2SB834 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB834
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR) CEO Collector-emitter breakdown voltage IC=-50mA ; IB=0
-60
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-0.7 -1.0
V
VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.3A
-0.5 -1.0
V
ICBO
Collector cut-off current
VCB=-60V;IE=0
-0.1 mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-0.1 mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
60
200
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
Cob
Collector output capacitance
IE=0; VCB=-10V; f=1MHz
150
pF
fT
Transition frequency
固I电NC半H导A体NGE SEMICONDUCTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-0.5A ; VCE=-5V
VCC=-30V; RL=15Ω
IB1=-IB2=-0.2A
9
MHz
0.4
μs
1.7
μs
0.5
μs
hFE-1 classifications
O
Y
60-120
100-200
2
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