IRGBC30 Просмотр технического описания (PDF) - International Rectifier

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IRGBC30

Fast Speed IGBT

International Rectifier 

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IRGBC30F

1400

V GE = 0V,

f = 1MHz

Cies = Cge + C gc , Cce SHORTED

1200

Cres = C gc

Coes = Cce + C gc

1000

Cies

800

Coes

600

400

Cres

200

0

1

10

100

V C E , C ollector-to-E m itter V oltage (V )

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

20

VCE = 400V

IC = 17A

16

12

8

4

0

0

5

10

15

20

25

30

Q g , Total G ate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

2.7

VCC = 480V

VG E = 15V

TC = 25°C

2.6 IC = 17A

2.5

2.4

2.3

2.2

0

10

20

30

40

50

60

R G , Gate Resistance (Ω )

W

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

10

IC = 34A

I C = 17A

IC = 8.5A

RG = 23 Ω

V GE = 15 V

1

VCC = 480V

-60 -40 -20 0 20 40 60 80 100 120 140 160

TC, C ase Tem perature (°C )

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-61

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