2SB649 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SB649 Datasheet PDF : 8 Pages
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2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
PC * 1
Tj
Tstg
Ratings
2SB649
2SB649A
Unit
–180
–180
V
–120
–160
V
–5
–5
V
–1.5
–1.5
A
–3
–3
A
1
1
W
20
20
W
150
150
°C
–55 to +150
–55 to +150
°C
2
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