BUT12AF Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

BUT12AF

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BUT12F BUT12AF

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

BUT12F

BUT12AF

IC=0.1A; IB=0;L=25mH

VCEsat

Collector-emitter

saturation voltage

BUT12F

BUT12AF

IC=6A; IB=1.2A

IC=5A; IB=1A

VBEsat

ICES

IEBO

Base-emitter

saturation voltage

BUT12F

BUT12AF

IC=6A; IB=1.2A

IC=5A; IB=1A

Collector

cut-off current

BUT12F

BUT12AF

VCE=850V ;VBE=0

Tj=125

VCE=1000V ;VBE=0

Tj=125

Emitter cut-off current

VEB=9V; IC=0

hFE-1

DC current gain

IC=10mA ; VCE=5V

hFE-2

DC current gain

IC=1A ; VCE=5V

Switching times resistive load

ton

Turn-on time

ts

Storage time

tf

Fall time

For BUT12F

IC=6A;IB1=-IB2=1.2A;VCC=250V

For BUT12AF

IC=5A;IB1=-IB2=1A;VCC=250V

MIN TYP. MAX UNIT

400

V

450

1.5

V

1.5

V

1.0

3.0

mA

1.0

3.0

10

mA

10

35

10

35

1.0

µs

4.0

µs

0.8

µs

2

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