BUT12AF Просмотр технического описания (PDF) - Philips Electronics

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BUT12AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT12F; BUT12AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT186 plastic

package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

mb mounting base; electrically isolated from all pins

handbook, halfpage

handbook, halfpage

2

1

MBB008

3

1 2 3 MBK109

Fig.1 Simplified outline (SOT186) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCESM

collector-emitter peak voltage

BUT12F

BUT12AF

VCEO

collector-emitter voltage

BUT12F

BUT12AF

VCEsat

ICsat

collector-emitter saturation voltage

collector saturation current

BUT12F

BUT12AF

IC

collector current (DC)

ICM

collector current (peak value)

Ptot

total power dissipation

tf

fall time

CONDITIONS

VBE = 0

open base

see Figs 7 and 9

MAX.

UNIT

850

V

1 000

V

400

V

450

V

1.5

V

6

A

5

A

see Figs 2 and 4

8

A

see Fig.2

20

A

Th ≤ 25 °C; see Fig.3

23

W

resistive load; see Figs 11 and 12 0.8

µs

1997 Aug 13

1

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