IRF640S Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

IRF640S

HEXFET® Power MOSFET

International Rectifier 

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF640S/L

VDS

VGS

RG

RD

D.U.T.

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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