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2SD2222 Просмотр технического описания (PDF) - Panasonic Corporation
Номер в каталоге
Компоненты Описание
производитель
2SD2222
Silicon NPN triple diffusion planar type darlington Power Transistors
Panasonic Corporation
2SD2222 Datasheet PDF : 4 Pages
1
2
3
4
2SD2222
200
160
(1)
120
P
C
T
a
(1)T
C
=Ta
(2)With a 100
×
100
×
2mm
Al heat sink
(3)Without heat sink
(P
C
=3.5W)
80
40
(2)
(3)
0
0
40
80
120
160
Ambient temperature T
a
(
°
C)
I
C
V
CE
10
T
C
=25˚C
I
B
=1.0mA
8
0.9mA
0.8mA
6
0.7mA
4
0.6mA
0.5mA
2
0.4mA
0.3mA
0
0
4
8
12
16
Collector-emitter voltage V
CE
(V)
V
CE(sat)
I
C
100
I
C
/I
B
=1000
10
1
T
C
=–25˚C
25˚C
125˚C
0.1
0.01
0.1
1
10
100
Collector current I
C
(A)
V
BE(sat)
I
C
100
I
C
/I
B
=1000
10
T
C
=–25˚C
25˚C
1
125˚C
0.1
h
FE
I
C
10
5
V
CE
=5V
10
4
T
C
=125˚C
10
3
25˚C
10
2
–25˚C
C
ob
V
CB
10
4
I
E
=0
f=1MHz
T
C
=25˚C
10
3
10
2
10
0.01
0.1
1
10
100
Collector current I
C
(A)
10
0.1
1
10
Collector current I
C
(A)
1
0.1
1
10
100
Collector-base voltage V
CB
(V)
t
on
, t
stg
, t
f
I
C
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=1000(–I
B1
=I
B2
)
V
CC
=50V
T
C
=25˚C
10
t
stg
t
on
1
t
f
0.1
Safe operation area
100
Non repetitive pulse
T
C
=25˚C
I
CP
10
I
C
t=10ms
t=1ms
DC
1
0.1
0.01
0
2 4 6 8 10 12
Collector current I
C
(A)
0.01
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
2
SJD00255BED
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