2SK3018LT1 Просмотр технического описания (PDF) - Willas Electronic Corp.

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Компоненты Описание

производитель

2SK3018LT1

N-channel SOT-23 Plastic-Encapsulate MOSFETS

Willas Electronic Corp. 

WILLAS

FM120-M+

2SK3018LTTH1 RU

1.0SAOSUTR-F2AC3EPMOlaUsNTtiScC-HEOnTTcKaYpBAsRuRlIaERteREMCTOIFISERFSE-2T0VS- 200V

FM1200-M+

SOD-123+ PACKAGE

Pb Free Product

Features

Typical CharaPcactkeagreiosuttliince s

• Batch process design, excellent power dissipation offers

better reverse leakagOeuctpuurtreCnhtaarancdtetrhisetrimcsal resistance.

• Low0p.2r0ofile surface mounted application in order to

200

optimizeTba=o2a5℃rd space4..0V

• Low powPeurlsleodss, high3e.5fVficiency.

VGS=3.0V

100

• High current capability, low forward voltage drop.

TraSnOsfDer-1C2h3aHracteristics

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

• High0.s15urge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

•

•

Silicon

Lead0.-1f0r

e

e

p

e

itaxial

parts

planar ch

meet envi

ip, metal s

ronmental

ilicon junct

standards

ion

of

.VGS=2.5V

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Mech0.05 anical data

• Epoxy : UL94-V0 rated flame retardant

VGS=2.0V

• Case : Molded plastic, SOD-123H

VGS=1.5V

•

0.00

Termina0 ls

:Plated1 terminals2,

solderab3le

per

,

MIL4-STD-7505

30

10

3

1

0.3

0.031(0.8) Typ.

0.1

0

1

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6) VDS=3V

Ta=25℃

0.031(0.8) TPyupl.sed

2

3

4

MethoDdR2A0IN2T6O SOURCE VOLTAGE VDS (V)

GATE TO SOURCE VOLTAGE VGS (V)

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

•

Weigh60t

:

Approximated

0R.0DS1(O1N)g

——

ram

ID

15

Ta=25℃

MPAulXseIdMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive 4lo0 ad, derate current by 20%

10

RDS(ON) —— VGS

Ta=25℃

Pulsed

RATINGS

Marking Code

Maximum Recurrent Peak Reverse Voltage

Maximum RMS V20oltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

12

13

14

15

16

18

10

115 120

VRRM

20

30

VRMS

14

21

VDC

20

30

40

50

28 5 35

40

50

60

80

100

42

ID=10506mA

70

60

80

100

150

200 Volts

105

140 Volts

150

200 Volts

VGS=2.5VIO

ID=50mA 1.0

Amps

Peak Forward

superimposed

Surge Current 8.3 ms single half

on r0ated load (JEDEC method)

sine-wavVeGS=4IVFSM

0

1

3

10

30

100

200

0

Typical Thermal Resistance (Note 2D) RAIN CURRENT

Typical Junction Capacitance (Note 1)

ID

(mRAΘ)JA

CJ

Operating Temperature Range

TJ

-55 to +125

30

5

10

GATE T4O0SOURCE VOLTAGE

120

15

VGS (V)

-55 to +150

Amps

20

℃/W

PF

℃

Storage Temperature Range

TSTG

IS —— VSD

- 65 to +175

℃

200

VCGHS=A0VRACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

Maximum Forwa10r0d VToa=lt2a5g℃e at 1.0A DC

VF

0.50

0.70

0.85

0.9

0.92 Volts

Pulsed

Maximum Average Reverse Current at @T A=25℃

IR

0.5

mAmps

Rated DC Blockin30g Voltage

@T A=125℃

10

NOTES:

10

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

3

1

0.3

2012-06 0.10.2

0.4

0.6

0.8

1.0

SOURCE TO DRAIN VOLTAGE VSD (V)

2012-10

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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