2SC5299 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
Номер в каталоге
Компоненты Описание
производитель
2SC5299 Datasheet PDF : 3 Pages
| |||
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC5299
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=8A;IB=2 A
VBEsat Base-emitter saturation voltage
IC=8A;IB=2 A
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
IEBO
Emitter cut-off current
VEB=4V ;IC=0
ICBO
Collector cut-off current
VCB=800V IE=0
ICES
Collector cut-off current
VCE=1500V; RBE=0
hFE-1
DC current gain
IC=1 A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
Switching times
tstg
Storage time
tf
Fall time
IC=6A;RL=33.3Ω
IB1=1.2A; IB2=-2.4A
VCC=200V
MIN
TYP.
MAX UNIT
5
V
1.5
V
800
V
1.0
mA
10
μA
1
mA
20
30
4
7
3.0
μs
0.1
0.2
μs
JMnic
Share Link: 