3DD13002/TO-251 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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3DD13002/TO-251

Plastic-Encapsulate NPN Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251 Plastic-Encapsulate Transistors

3DD13002 TRANSISTOR（ NPN ）

FEATURES

Power dissipation

PCM : 1.25 W（Tamb=25℃）

Collector current

ICM :

1A

Collector-base voltage

V(BR)CBO : 600 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

TO— 251

1.BASE

2.COLLECTOR

3.EMITTER

　　　　 1 2 3

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

TYP

MAX

Collector-base breakdown voltage

V(BR)CBO

Ic= 100μA， IE=0

600

Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0

400

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA， IC=0

6

Collector cut-off current

ICBO

VCB= 600 V， IE=0

100

Emitter cut-off current

IEBO

VEB= 6

V， IC=0

100

DC current gain

hFE（1）

VCE= 10 V, IC= 200 m A

9

40

hFE（2）

VCE= 10 V, IC=250 µA

5

Collector-emitter saturation voltage

VCE(sat)

IC=200m A, IB= 40 m A

0.8

Base-emitter saturation voltage

VBE(sat)

IC=200mA, IB= 40 m A

1.1

Transition frequency

fT

VCE=10V, Ic=100mA

5

f =1MHz

Fall time

tf

IC=1A, IB1=-IB2=0.2A

0.5

Storage time

ts

VCC=100V

2.5

UNIT

V

V

V

µA

µA

V

V

MHz

µs

µs

CLASSIFICATION OF hFE(2)

Rank

Range

9-15

15-20

20-25

25-30

30-35

35-40

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