MBR160TG Просмотр технического описания (PDF) - Unspecified

Номер в каталоге

Компоненты Описание

производитель

MBR160TG

Schottky Barrier Rectifier

Unspecified 

Schottky Barrier Rectifier

MBR120TG THRU MBR1200TG

Reverse Voltage: 20 to 200 Volts

Forward Current: 1.0 Ampere

Package outline

Features

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency

• High current capability, Low forward voltage drop

• High surge capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

• High temperature soldering guaranteed:

260。C/10 seconds at terminals

• Component in accordance to RoHS 2002/95/EC and

WEEE 2002/96/EC

Mechanical data

• Case: R-1 molded plastic body

• Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

• Polarity: Color band denotes cathode end

• Mounting Position: Any

• Weight: 0.007 ounce, 0.20 gram

R-1

0.102(2.6)

0.091(2.3)

DIA.

0.787(20.0)

MIN.

0.126(3.2)

0.106(2.7)

0.025(0.65)

0.021(0.55)

DIA.

0.787(20.0)

MIN.

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

• Ratings at 25。C ambient temperature unless otherwise specified.

• Single phase, half wave, resistive or inductive load.

• For capacitive load derate by 20%.

Type Number

Symbols

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375"(9.5mm) lead length(see Fig. 1 )

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

Maximum instantaneous forward voltage

at 1.0 A(Note 1 )

Maximum instantaneous reverse

current at rated DC blocking

voltage(Note 1)

TA =25 C

TA =100 C

Typical junction capacitance(Note 3)

Typical thermal resistance(Note 2)

VRRM

VRMS

VDC

I(AV)

IFSM

VF

IR

CJ

R JA

MBR

120

TG

20

14

20

MBR

130

TG

30

21

30

MBR

140

TG

40

28

40

MBR

150

TG

50

35

50

MBR

160

TG

60

42

60

MBR

180

TG

80

57

80

1.0

MBR

1100

TG

100

71

100

MBR

1150

TG

150

105

150

MBR

1200

TG

200

140

200

40.0

0.55

0.70

0.85

0.90 0.95

0.2

10

110

50.0

Operating junction temperature range

Storage temperature range

TJ

TSTG

-65 to+150

-65 to+150

Notes: 1.Pulse test: 300 s pulse width,1% duty cycle

2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted , 0.5"(12.7mm)lead length

3.Measured at 1.0MHz and reverse voltage of 4.0 volts

Units

Volts

Volts

Volts

Amp

Amps

Volts

mA

PF

C/W

C

C

@ 2010 Copyright By American First Semiconductor

Page 1/2

Share Link: