2SB1151G-Y-TN3-K Просмотр технического описания (PDF) - Unisonic Technologies

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2SB1151G-Y-TN3-K

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SB1151

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-7

V

Collector Current

DC

IC

Pulse(Note 2)

ICP

-5

A

-8

A

Base Current

IB

-1

A

SOT-223

1

W

Power Dissipation (Ta=25°C) TO-126

PD

TO-252

1.5

W

2

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.PW≤10ms, Duty Cycle≤50%

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

SYMBOL

TEST CONDITIONS

BVCBO IC=-100uA, IE=0

BVCEO IC=-1mA, IB=0

BVEBO IE=-100uA, Ic=0

ICBO VCB=-50V, IE=0

IEBO VEB=-7V, IC=0

VCE(SAT) IC=-2A, IB=-0.2A

VBE(SAT) IC=-2A, IB=-0.2A

hFE 1 VCE=-1V, IC=-0.1A

hFE 2 VCE=-1V, IC=-2A

hFE 3 VCE=-2V, IC=-5A

MIN TYP MAX UNIT

-60

V

-60

V

-7

V

-10 µA

-10 µA

-0.14 -0.3 V

-0.9 -1.2 V

60

160

400

50

Turn On Time

tON

0.15 1 µS

Switching Time

Storage Time

tSTG

0.78 2.5 µS

Fall Time

tF

Pulse test : PW≤350 µS, Duty Cycle≤2% Pulse

„ CLASSIFICATION OF hFE2

RANK

RANGE

O

160 ~ 320

0.18 1 µS

Y

200 ~ 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R204-022.C

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