2SA1319 Просмотр технического описания (PDF) - SANYO -> Panasonic
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2SA1319 Datasheet PDF : 3 Pages
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Ordering number:EN1334C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1319/2SC3332
High-Voltage Switching Applications
Features
· Hgih breakdown voltage.
· Excellent hFE linearity.
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
Switching Test Circuit
Package Dimensions
unit:mm
2003A
[2SA1319/2SC3332]
( ) : 2SA1319
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
Specifications
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
B : Base
C : Collector
E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
(–)180 V
(–)160 V
(–)6 V
(–)0.7 A
(–)1.5 A
700 mW
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V
IC=(–)250mA, IB=(–)25mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)250mA, IB=(–)25mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Fall Time
tf
See specified Test Circuit
* : The 2SA1319/2SC3332 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400
Ratings
min
typ
100*
80
120
(11)8
(0.20)
0.12
(–)0.85
(–)180
(–)160
(–)6
(60)50
(900)
1000
(60)60
max
(–)0.1
(–)0.1
400*
(0.5)
0.4
(–)1.2
Unit
µA
µA
MHz
pF
V
V
V
V
V
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/3
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