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STM32F103X8 Просмотр технического описания (PDF) - STMicroelectronics

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STM32F103X8 Datasheet PDF : 67 Pages
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STM32F103xx
Electrical characteristics
5.3.7
Internal clock source characteristics
The parameters given in Table 19 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 7.
High-speed internal (HSI) RC oscillator
Table 19. HSI oscillator characteristics(1)(2)
Symbol
Parameter
Conditions
fHSI Frequency
ACCHSI Accuracy of HSI oscillator
tsu(HSI) HSI oscillator start up time
IDD(HSI)
HSI oscillator power
consumption
TA = –40 to 105 °C
at TA = 25°C
1. VDD = 3.3 V, TA = 40 to 105 °C unless otherwise specified.
2. TBD stands for to be determined.
3. Values based on device characterization, not tested in production.
LSI Low Speed Internal RC Oscillator
Min
TBD
TBD
1
Typ Max(3) Unit
8
MHz
±3
TBD
%
±1
TBD
%
2
µs
80
100 µA
Table 20. LSI oscillator characteristics (1)
Symbol
Parameter
Conditions
fLSI
tsu(LSI)
IDD(LSI)
Frequency
LSI oscillator start up time
LSI oscillator power
consumption
1. VDD = 3 V, TA = 40 to 105 °C unless otherwise specified.
2. Value based on device characterization, not tested in production.
Min
Typ Max(2) Unit
30
60 kHz
85
µs
0.65 1.2
µA
37/67

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