STM32F103xx
Electrical characteristics
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = −40 to 105 °C unless otherwise specified.
Table 23. Flash memory characteristics
Symbol
Parameter
Conditions
Min Typ Max(1) Unit
tprog
Word programming time
TA = −40 to +105 °C 20
tERASE
Page (1kB) erase time
TA = −40 to +105 °C 20
tME
Mass erase time
TA = −40 to +105 °C 20
Read mode
fHCLK = 72 MHz with
2 wait states,
VDD = 3.3 V
IDD
Supply current
Write / Erase modes
fHCLK = 72 MHz,
VDD = 3.3 V
Power-down mode /
HALT,
VDD = 3.0 to 3.6 V
1. Values based on characterization and not tested in production.
40
µs
40 ms
40 ms
20 mA
5
mA
50 µA
Table 24. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Min(1) Typ Max
Unit
NEND Endurance
tRET Data retention
TA = 85 °C
1. Values based on characterization not tested in production.
1
10
30
kcycles
Years
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