2SC2928 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2SC2928 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.2A ; RBE=∞
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBE(sat) Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO
Collector cut-off current
VCB=1200V ;IE=0
ICEO
Collector cut-off current
VCE=650V ; RBE=∞
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3.0A; VCC=250V
IB1=0.6A ,IB2=-1.5A
Product Specification
2SC2928
MIN TYP. MAX UNIT
800
V
7
V
1.0
V
1.5
V
100
μA
100
μA
15
7
1.0
μs
3.0
μs
1.0
μs
2
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