BUT11 Просмотр технического описания (PDF) - Power Innovations

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BUT11

NPN SILICON POWER TRANSISTOR

Power Innovations 

BUT11

NPN SILICON POWER TRANSISTOR

MAY 1989 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33 Ω

+5V

V Gen

68 Ω

BY205-400

BY205-400

33 Ω

1 pF

1 kΩ

0.02 µ F

+5V

1 kΩ

2N2222

D45H11

RB (on)

180 µ H

vcc

TUT

BY205-400

Vclamp = 400 V

270 Ω BY205-400

1 kΩ

5X BY205-400

Adjust pw to obtain IC

For IC < 6 A VCC = 50 V

For IC ≥ 6 A VCC = 100 V

2N2904

47 Ω

100 Ω

D44H11

VBE(off)

Figure 1. Inductive-Load Switching Test Circuit

A - B = tsv

B - C = trv

D - E = tfi

E - F = tti

B - E = txo

IB(on)

IB

VCE

A (90%)

C 90%

B 10%

D (90%)

Base Current

Collector Voltage

E (10%)

I C(on)

F (2%)

Collector Current

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

B. Resistors must be noninductive types.

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

3

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