BUT11 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BUT11

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT11; BUT11A

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a TO-220AB package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

PIN

DESCRIPTION

1

base

2

collector; connected to

mounting base

3

emitter

andbook, halfpage

handbook, halfpage

MBK106

123

2

1

MBB008

3

Fig.1 Simplified outline (TO-220AB) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCESM

collector-emitter peak voltage

BUT11

BUT11A

VCEO

collector-emitter voltage

BUT11

BUT11A

VCEsat

IC

ICM

Ptot

tf

collector-emitter saturation voltage

collector current (DC)

collector current (peak value)

total power dissipation

fall time

CONDITIONS

VBE = 0

open base

see Figs 7 and 9

see Figs 2 and 4

see Fig. 4

Tmb ≤ 25 °C; see Fig.3

resistive load; see Figs 11 and 12

MAX.

850

1 000

400

450

1.5

5

10

100

0.8

UNIT

V

V

V

V

V

A

A

W

µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-mb

thermal resistance from junction to mounting base

VALUE

1.25

UNIT

K/W

1997 Aug 13

1

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