BUT11 Просмотр технического описания (PDF) - Philips Electronics
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BUT11 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT11; BUT11A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEOsust collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see
BUT11
Figs 5 and 6
400 −
BUT11A
450 −
VCEsat
collector-emitter saturation voltage
BUT11
IC = 3 A; IB = 600 mA; see Figs 7 and 9 −
−
BUT11A
IC = 2.5 A; IB = 500 mA; see
Figs 7 and 9
−
−
VBEsat
base-emitter saturation voltage
BUT11
IC = 3 A; IB = 0.6 A; see Fig.7
−
−
BUT11A
IC = 2.5 A; IB = 0.5 A; see Fig.7
−
−
ICES
collector-emitter cut-off current
VCE = VCESMmax; VBE = 0; note 1
−
−
VCE = VCESMmax; VBE = 0; Tj = 125 °C; −
−
note 1
IEBO
emitter-base cut-off current
hFE
DC current gain
VEB = 9 V; IC = 0
VCE = 5 V; IC = 5 mA; see Fig.10
VCE = 5 V; IC = 500 mA; see Fig.10
−
−
10 18
10 20
Switching times resistive load (see Fig.12)
−
V
−
V
1.5 V
1.5 V
1.3 V
1.3 V
1
mA
2
mA
10 mA
35
35
ton
turn-on time
BUT11
BUT11A
ts
storage time
BUT11
BUT11A
tf
fall time
BUT11
BUT11A
Switching times inductive load (see Fig.14)
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
−
−
1
µs
−
−
1
µs
−
−
4
µs
−
−
4
µs
−
−
0.8 µs
−
−
0.8 µs
ts
storage time
BUT11
BUT11A
tf
fall time
BUT11
BUT11A
ICon = 3 A; IBon = 600 mA
−
ICon = 3 A; IBon = 600 mA; Tj = 100 °C −
ICon = 2.5 A; IBon = 500 mA
−
ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C −
ICon = 3 A; IBon = 600 mA
−
ICon = 3 A; IBon = 600 mA; Tj = 100 °C −
ICon = 2.5 A; IBon = 500 mA
−
ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C −
1.1 1.4 µs
1.2 1.5 µs
1.1 1.4 µs
1.2 1.5 µs
80 150 ns
140 300 ns
80 150 ns
140 300 ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
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