BUT11 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

BUT11

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT11; BUT11A

handbook, halfpage

+ 50 V

100 to 200 Ω

L

horizontal

oscilloscope

vertical

6V

30 to 60 Hz

300 Ω

1Ω

MGE252

handbookI,Chalfpage

(mA)

250

200

100

0

MGE239

min VCE (V)

VCEOsust

Fig.5 Test circuit for collector-emitter

sustaining voltage.

Fig.6 Oscilloscope display for collector-emitter

sustaining voltage.

2.0

handbook, full pagewidth

VBEsat

VCEsat

(V)

1.5

MGB913

1.0

(1)

(2)

0.5

0

10−2

IC/IB = 5.

(3)

(4)

10−1

1

(1) VBE; Tj = 25 °C.

(2) VBE; Tj = 100 °C.

(3) VCE; Tj = 100 °C.

(4) VCE; Tj = 25 °C.

IC (A)

10

Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.

1997 Aug 13

5

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