BUT11A Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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BUT11A Datasheet PDF : 6 Pages
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SEMICONDUCTOR
BUT11A Series RRooHHSS
Nell High Power Products
Fig.6 VBE(sat)·VCE(sat) - IC Temperature
characteristics (Typical)
2.0
lC/IB = 5
1.5
1.0
TJ = 25°C
(1)
0.5
0
0.01
V BE
TJ = 100°C
V CE
TJ = 100°C
(4) TJ = 25°C
0.1
1
10
Collector current , lC (A)
1.6
TJ = 25°C
1.4
1.2
1.0
Fig.7 VBE - IB Characteristics
IC = 6A
IC = 8A
IC = 3A
0.8
0
0.25
0.5
0.75
1.0
1.25
1.5
Base current, IB (A)
Fig.8 VCE(sat) - IB Characteristics (Typical)
10
TJ = 25°C
1
IC=1.5A IC=3A IC=5A
Fig.9 DC current gain
2
10
VCE = 5V
1V
10
-1
10
-2
10
-1
10
1
Base current, IB (A)
www.nellsemi.com
1
10
-2
-1
10
10
1
2
10
10
Collector current, lC (A)
Page 4 of 6
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