TIP29 Просмотр технического описания (PDF) - Inchange Semiconductor

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TIP29

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

TIP29

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A

VBE(on) Base-Emitter On Voltage

IC= 1A; VCE= 4V

ICES

Collector Cutoff Current

VCE= 40V; VEB= 0

ICEO

Collector Cutoff Current

VCE= 30V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.2A; VCE= 4V

hFE-2

DC Current Gain

IC= 1A; VCE= 4V

fT

Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V; f= 1MHz

MIN MAX UNIT

40

V

0.7

V

1.3

V

0.2

mA

0.3

mA

1.0

mA

40

15

75

3

MHz

isc Website：www.iscsemi.cn

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