MJE13007 MJF13007
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
VCEO(sus)
400
—
—
Vdc
ICES
IEBO
mAdc
—
—
0.1
—
—
1.0
—
—
100
µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
Clamped Inductive SOA with Base Reverse Biased
—
See Figure 6
See Figure 7
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Collector to Heatsink Capacitance, MJF13007
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
hFE
—
8.0
—
40
5.0
—
30
VCE(sat)
—
—
—
—
Vdc
—
1.0
—
2.0
—
3.0
—
3.0
VBE(sat)
—
—
—
Vdc
—
1.2
—
1.6
—
1.5
fT
Cob
Cc–hs
4.0
14
—
MHz
—
80
—
pF
—
3.0
—
pF
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125 Vdc, IC = 5.0 A,
IB1 = IB2 = 1.0 A, tp = 25 µs,
Duty Cycle ≤ 1.0%)
Inductive Load, Clamped (Table 1)
td
—
0.025
0.1
µs
tr
—
0.5
1.5
ts
—
1.8
3.0
tf
—
0.23
0.7
Voltage Storage Time VCC = 15 Vdc, IC = 5.0 A
TC = 25°C
tsv
Vclamp = 300 Vdc
TC = 100°C
Crossover Time
IB(on) = 1.0 A, IB(off) = 2.5 A TC = 25°C
tc
LC = 200 µH
TC = 100°C
Fall Time
TC = 25°C
tfi
TC = 100°C
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
—
1.2
2.0
µs
—
1.6
3.0
—
0.15
0.30
µs
—
0.21
0.50
—
0.04
0.12
µs
—
0.10
0.20
2
Motorola Bipolar Power Transistor Device Data