MJE350(1997) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

MJE350
(Rev.:1997)

COMPLEMETARY SILICON POWER TRANSISTORS

STMicroelectronics 

MJE340 / MJE350

THERMAL DATA

Rthj-ca se Thermal Resist ance Junction-case

Max

6.0

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol

P a ram et er

Test Conditions

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 300 V

IEBO

Emitt er Cut-off Current VEB = 3 V

(IC = 0)

VCEO(sus )∗ Collect or-Emitter

Sustaining Voltage

(IB = 0)

IC = 1 mA

hFE DC Current G ain

IC = 50 mA

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2%

VCE = 10 V

Min.

300

30

Typ .

M a x.

100

100

240

Unit

µA

µA

V

Safe Operating Area

Derating Curve

2/5

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