2SC2553 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC2553 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2553
DESCRIPTION
·
·With TO-220C package
·High collector breakdown voltage
: VCEO=400V(Min)
·Excellent switching time
: tr=1.0μs(Max.)
: tf=1.0μs(Max.@IC=4A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
固IN电C半H导AN体GE SEMICONDUCTOR 3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
CONDITIONS
Open emitter
VALUE
500
UNIT
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
IB
Base current
1
A
PC
Collector dissipation
Ta=25℃
TC=25℃
1.5
W
40
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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