PHD78NQ03LT Просмотр технического описания (PDF) - Philips Electronics
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PHD78NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
VDS = 25 V; ID = 50 A
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 15 V; ID = 25 A; VGS = 10 V;
RG = 5.6 Ω; resistive load
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VDS = 25 V
Qrr
recovered charge
Min Typ Max Unit
25 -
-
V
22 -
-
V
1 1.5 2 V
0.5 -
-
V
-
-
2.3 V
-
0.05 10 µA
-
-
500 µA
-
10 100 nA
-
11.5 13.5 mΩ
-
20.7 24.3 mΩ
-
7.65 9 mΩ
-
34 -
S
-
13 -
nC
-
4.8 -
nC
-
4.2 5.6 nC
-
1074 -
pF
-
389 -
pF
-
156 -
pF
-
20 33 ns
-
92 130 ns
-
30 48 ns
-
40 60 ns
-
0.95 1.2 V
-
40 -
ns
-
32 -
nC
9397 750 08916
Product data
Rev. 01 — 14 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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