D45H8 Просмотр технического описания (PDF) - Inchange Semiconductor
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D45H8 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
D45H8
DESCRIPTION
·
·With TO-220C package
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·For general purpose power amplifications
and switching regulators,converters and
power amplifiers applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-5
UNIT
V
V
V
IC
Collector current (DC)
-10
A
ICM
Collector current-Peak
-20
A
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
Ta=25℃
50
W
1.67
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
2.5
UNIT
℃/W
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