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30CTQ050-1 Просмотр технического описания (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

Номер в каталоге
Компоненты Описание
производитель
30CTQ050-1
SMC
Sangdest Microelectronic (Nanjing) Co., Ltd 
30CTQ050-1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0683, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current
(per leg) *
Max. Junction Capacitance
(per leg)
Max. Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
dv/dt
Condition
@ 15A, Pulse, TJ = 25 °C
@ 15A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125°C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
-
30CTQ50/60
30CTQ50/60S
30CTQ50/60-1
Green Products
Max.
0.62
0.56
1.0
45
720
10,000
Units
V
V
mA
mA
pF
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
-
Specification
-55 to +175
-55 to +175
Units
°C
°C
RθJC DC operation
3.25
°C/W
wt
-
2/1.85
g
TO-220AB D2PAK TO-262(Suffix”-1” for TO-262;”S” for D2PAK)
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

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