NTE2564 Просмотр технического описания (PDF) - NTE Electronics

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производитель

NTE2564

Complementary Silicon Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Turn–On Time

Storage Time

NTE2564

NTE2565

V(BR)CBO IC = 1mA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 1mA, IC = 0

ton VCC = 10V, VBE = –5V,

tstg

20IB1 = –20IB2 = IC = 4A,

Pulse Width = 20µs,

Duty Cycle ≤ 1%, Note 1

60 – – V

30 – – V

6––V

– 0.1 – µs

– 0.5 – µs

– 0.2 – µs

Fall Time

tf

– 1.6 – µs

Note 1. For NTE2565, the polarity is reversed.

.402 (10.2)

.035

(0.9)

BC E

.346

(8.8)

.433

(11.0)

.100 (2.54)

.177 (4.5)

.051 (1.3)

.019 (0.5)

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