TIP35D Просмотр технического описания (PDF) - Inchange Semiconductor

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TIP35D

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

TIP35D

DESCRIPTION

·DC Current Gain-

: hFE= 25(Min)@IC = 1.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 120V(Min)

·Complement to Type TIP36D

·Current Gain-Bandwidth Product-

: fT= 3.0MHz(Min)@IC= 1.0A

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

160

V

VCEO Collector-Emitter Voltage

120

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

25

A

ICM

Collector Current-peak

40

A

IBB

Base Current

5

A

PC

Collector Power Dissipation@ TC=25℃

125

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

1.0

UNIT

℃/W

isc Website：www.iscsemi.cn

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