MMBTA13 Просмотр технического описания (PDF) - Semtech Electronics LTD.

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производитель

MMBTA13

NPN Silicon Epitaxial Planar Darlington Transistor

Semtech Electronics LTD. 

MMBTA13

Characteristics at Tamb=25 OC

DC Current Gain

at IC=10mA, VCE=5V

at IC=100mA, VCE=5V

Collector Cutoff Current

at VCB=30V

Emitter Cutoff Current

at VEB=10V

Collector Emitter Breakdown Voltage

at IC=100μA

Collector Saturation Voltage

at IC=100mA, IB=0.1mA

Base On Voltage

at IC=100mA, VCE=5V

Current Gain – Bandwidth Product

at IC=10mA, VCE=10V, f=100MHz

Symbol

Min.

hFE

5000

hFE

10,000

ICBO

-

IEBO

-

V(BR)CES

30

VCE(sat)

VBE(on)

fT

-

-

125

Max.

-

-

0.1

0.1

-

1.5

2

-

Unit

-

-

μA

μA

V

V

V

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 20/10/2005

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