TIP32C-TA3-R Просмотр технического описания (PDF) - Unisonic Technologies

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TIP32C-TA3-R

PNP EXPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

TIP32C

PNP SILICON TRANSISTOR

„ ABSOLUATE MAXIUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-100

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

IC

PULSE

ICM

-3

A

-5

A

Base Current

IB

-1

A

TO-220

Power Dissipation

TO-252

PD

2

W

1

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)

PARAMETER

Collector Emitter Sustaining Voltage

(Note)

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff current

Collector-Emitter Saturation Voltage

(Note)

Base-Emitter On Voltage*

SYMBOL

BVCEO

ICES

ICEO

IEBO

VCE(SAT)

VBE(ON)

DC Current Gain (Note)

hFE

Current Gain Bandwidth Product

fT

Note: Pulse Test: PW≤300μs, Duty Cyle≤2%

TEST CONDITIONS

IC=-30mA,IB=0

VCE=-100V, VBE=0

VCE=-60V, IB=0

VBE=-5V, IC=0

IC=-3A, IB=-375mA

IC=-3A, VCE=-4A

IC=-1A, VCE=-4V

IC=-3A, VCE=-4V

IC=-0.5A,VCE=-10V, f=1MHz

MIN TYP MAX UNIT

-100

V

-200 μA

-0.3 mA

-1 mA

-1.2 V

-1.8 V

25

10

50

3

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R209-017,C

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