BUV20 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BUV20

NPN MULTI - EPITAXIAL POWER TRANSISTOR

New Jersey Semiconductor 

£07

^£.mi-(2onauctoi l/~\ One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BUV20

NPN MULTI - EPITAXIAL

POWER TRANSISTOR

FEATURES

• HIGH CURRENT

• FAST SWITCHING

• HIGH RELIABILITY

APPLICATIONS

• Industrial Equipment

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VCBO

Collector - Base Voltage (IE = 0)

VCER

VCEX

Collector - Emitter Voltage (RBE = 100ii)

Collector - Emitter Voltage (VBE = -1 ,5V)

VCEO

Collector - Emitter Voltage (IB = 0)

VEBO

Emitter - Base Voltage (lc = 0)

"c

Collector Current

'CM

Peak Collector Current (tp = 10 ms)

IB

Base Current

Ptot

Total Power Dissipation at T^g < 25°C

Tstg*

Storage Temperature

TJ

Junction Temperature

160V

150V

160V

125V

7V

50A

60A

10A

250W

-65 to 200°C

200°C

Quality Semi-Conductors

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