2SB1509 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SB1509

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1509

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=;

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.4A

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-2V

hFE-2

DC current gain

IC=-8A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-2A; IB1=-IB2=-0.2A

RL=10B;VCCC20V

MIN TYP. MAX UNIT

-50

V

-60

V

-6

V

-0.26 -0.5

V

-100 µA

-100 µA

70

280

30

20

MHz

0.2

µs

0.5

µs

0.1

µs

hFE-1 Classifications

Q

R

S

70-140 100-200 140-280

2

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