PBSS5220V Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
PBSS5220V Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Reflow soldering is the only recommended soldering method.
1.2
Ptot
(W)
(1)
0.8
(2)
0.4
(3)
006aaa424
0
0
40
80
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
120
160
Tamb (°C)
PBSS5220V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
3 of 13
Share Link: 