PBSS5220V Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSS5220V Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
−1.2
VBEsat
(V)
−1.0
−0.8
−0.6
−0.4
006aaa430
(1)
(2)
(3)
102
RCEsat
(Ω)
10
1
006aaa431
(1)
(2)
(3)
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
−2.0
IC
(A)
−1.6
−1.2
−0.8
IB = −13 mA
006aaa432
−11.7 mA
−10.4 mA
−9.1 mA
−7.8 mA
−6.5 mA
−5.2 mA
−3.9 mA
−2.6 mA
103
RCEsat
(Ω)
102
10
006aaa433
−0.4
0
0
−2
Tamb = 25 °C
−1.3 mA
−4
−6
VCE (V)
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
1
10−1
−10−1
−1
(1)
(2)
(3)
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS5220V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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