AO9926B Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

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AO9926B

Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO9926B

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO9926B uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V VGS(MAX) rating. This device is suitable

for use as a uni-directional or bi-directional load

switch. Standard Product AO9926B is Pb-free (meets

ROHS & Sony 259 specifications). AO9926BL is a

Green Product ordering option. AO9926B and

AO9926BL are electrically identical.

Features

VDS (V) = 20V

ID = 7.6 A (VGS = 10V)

RDS(ON) < 23mΩ (VGS = 10V)

RDS(ON) < 26mΩ (VGS = 4.5V)

RDS(ON) < 34mΩ (VGS = 2.5V)

RDS(ON) < 52mΩ (VGS = 1.8V)

S2 1 8 D2

G2 2 7 D2

S1 3 6 D1

G1 4 5 D1

SOIC-8

D1

D2

G1

S1

G2

S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

20

±12

7.6

6.1

30

2

1.28

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

48

74

Maximum Junction-to-Lead C

Steady-State

RθJL

35

Max

62.5

110

50

Alpha & Omega Semiconductor, Ltd.

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

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