2SB826 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SB826 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB826
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SD1062
·Wide area of safe operation
APPLICATIONS
·Relay drivers,
·High-speed inverters, converters
·General high-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICP
Collector current (Pulse)
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-60
-50
-6
-12
-15
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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