IRF9540S Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.

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Компоненты Описание

производитель

IRF9540S

HEXFET POWER MOSFET

Kersemi Electronic Co., Ltd. 

D.U.T.

+

-

IRF9540S, SiHF9540S

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

Rg

• dV/dt controlled by Rg

+

• ISD controlled by duty factor “D”

• D.U.T. - device under test

- VDD

Note

• Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse

recovery

Body diode forward

current

D.U.T. VDS waveform

current

dI/dt

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

ISD

Note

a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

2014-8-28

7

www.kersemi.com

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