JAN2N6806 Просмотр технического описания (PDF) - TE Connectivity

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Компоненты Описание

производитель

JAN2N6806

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TE Connectivity 

MIL-PRF-19500/562C

TABLE I. Group A inspection - Continued.

Inspection 1/

Subgroup 4 – Continued

Turn-off delay time

2N6804

2N6806

Fall time

2N6804

2N6806

Subgroup 5

Single pulse unclamped

inductive switching 3/

Electrical measurements

Safe operating area test

Electrical measurements

Subgroup 6

Not applicable

Subgroup 7

Gate charge

Test 1

On-state gate charge

2N6804

2N6806

Test 2

Gate to source charge

2N6804

2N6806

Method

MIL-STD-750

Conditions

Symbol

VDD = -35 V dc

VDD = -63 V dc

VDD = -35 V dc

VDD = -63 V dc

td(off)

tf

3470 See 4.5.4, 116 devices, c = 0

3474

See table I, subgroup 2 herein.

VDS = 80 percent of rated VDS; VDS

≤ 200 V maximum, tp = 10 ms (see

figure 5).

See table I, subgroup 2 herein.

3471

Condition B

Qg(on)

Qgs

Limits

Unit

Min

Max

ns

140

100

ns

140

80

nC

29.0

31.0

7.1

7.0

See footnote at end of table.

13

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