D1632 Просмотр технического описания (PDF) - Inchange Semiconductor
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D1632 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1632
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=1A
VBEsat Base-emitter saturation voltage
IC=3A ;IB=1A
ICBO
Collector cut-off current
hFE
DC current gain
VCB=750V; IE=0
VCB=1500V; IE=0
IC=3A ; VCE=10V
VF
Diode forward voltage
IC=-4A
Switching times
tstg
Storage time
tf
Fall time
IC=3A
IBend=1A;LLeak=5μH
MIN TYP. MAX UNIT
5
V
1.0
V
1.5
V
50
μA
1
mA
5
15
2.2
V
4
9
μs
0.8
μs
2
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