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Номер в каталоге
Компоненты Описание
IRFD120(2010) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
IRFD120
(Rev.:2010)
Power MOSFET
Vishay Semiconductors
IRFD120 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
HVM DIP
(High voltage)
0.248 [6.29]
0.240 [6.10]
Package Information
Vishay Siliconix
0.043 [1.09]
0.035 [0.89]
0.094 [2.38]
0.086 [2.18]
0.017 [0.43]
0.013 [0.33]
0.133 [3.37]
0.125 [3.18]
0.197 [5.00]
0.189 [4.80]
AL
0.180 [4.57]
0.160 [4.06]
0.160 [4.06]
0.140 [3.56]
0° to 15°
2x
E min.
E max.
0.045 [1.14]
2 x
0.035 [0.89]
0.100 [2.54] typ.
0.024 [0.60]
0.020 [0.51]
4x
DIM.
A
E
L
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
MIN.
0.310
0.300
0.270
INCHES
MAX.
0.330
0.425
0.290
MIN.
7.87
7.62
6.86
MILLIMETERS
MAX.
8.38
10.79
7.36
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361
Revision: 06-Sep-10
www.vishay.com
1
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