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Компоненты Описание
2N3791 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2N3791
Silicon PNP Power Transistors
Inchange Semiconductor
2N3791 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N3791
2N3792
CONDITIONS
I
C
=-0.2A ;I
B
=0
V
CE(sat)
Collector-emitter saturation voltage I
C
=-5A; I
B
=-0.5A
V
BE(on)-1
Base-emitter on voltage
I
C
=-5A ; V
CE
=-2V
V
BE(on)-2
Base-emitter on voltage
I
CEX
Collector
cut-off current
2N3791
2N3792
I
EBO
Emitter cut-off current
I
C
=-10A ; V
CE
=-4V
V
CE
=-60V; V
BE(off)
=-1.5V
T
C
=150
℃
V
CE
=-80V; V
BE(off)
=-1.5V
T
C
=150
℃
V
EB
=-7V; I
C
=0
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-2V
h
FE-2
DC current gain
I
C
=-3A ; V
CE
=-2V
f
T
Transition frequency
I
C
=-0.5A;V
CE
=-10V
Product Specification
2N3791 2N3792
MIN TYP. MAX UNIT
-60
V
-80
V
-1.0
V
-1.8
V
-4.0
V
-1.0
-5.0
mA
-1.0
-5.0
mA
-5.0
mA
50
180
30
4
MHz
2
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