RJK60S3DPE Просмотр технического описания (PDF) - Renesas Electronics
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RJK60S3DPE Datasheet PDF : 8 Pages
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RJK60S3DPE
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
5
ID = 10 mA
4
3
1 mA
0.1 mA
2
1
VDS = 10 V
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
800
700
600
500
ID = 10 mA
VGS = 0
400
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 1.5°C/W
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (s)
10
100
R07DS0732EJ0200 Rev.2.00
Oct 12, 2012
Page 5 of 7
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